CY7C199C-20VC — Микросхема

Cypress Semiconductor Corp

Микросхема CY7C199C-20VC
IC SRAM 256K PARALLEL 28SOJ.

Технические характеристики
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Asynchronous
Memory Size
256Kb (32K x 8)
Memory Interface
Parallel
Write Cycle Time - Word, Page
20ns
Access Time
20ns
Voltage - Supply
4.5V ~ 5.5V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Surface Mount
Package / Case
28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package
28-SOJ


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