CY7C199CN-12VXA — Микросхема

Cypress Semiconductor Corp

Микросхема CY7C199CN-12VXA
IC SRAM 256K PARALLEL 28SOJ.

Технические характеристики
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Asynchronous
Memory Size
256Kb (32K x 8)
Memory Interface
Parallel
Write Cycle Time - Word, Page
12ns
Access Time
12ns
Voltage - Supply
4.5V ~ 5.5V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package
28-SOJ


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