CY7C199CN-15PXC — Микросхема

Cypress Semiconductor Corp

Микросхема CY7C199CN-15PXC
IC SRAM 256K PARALLEL 28DIP.

Технические характеристики
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Asynchronous
Memory Size
256Kb (32K x 8)
Memory Interface
Parallel
Write Cycle Time - Word, Page
15ns
Access Time
15ns
Voltage - Supply
4.5V ~ 5.5V
Operating Temperature
0°C ~ 70°C (TA)
Mounting Type
Through Hole
Package / Case
28-DIP (0.300", 7.62mm)
Supplier Device Package
28-PDIP


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