CYD09S36V18-200BBXI — Микросхема

Cypress Semiconductor Corp

Микросхема CYD09S36V18-200BBXI
IC SRAM 9M PARALLEL 256FBGA.

Технические характеристики
Memory Type
Volatile
Memory Format
SRAM
Technology
SRAM - Dual Port, Synchronous
Memory Size
9Mb (256K x 36)
Memory Interface
Parallel
Clock Frequency
200MHz
Access Time
3.3ns
Voltage - Supply
1.42V ~ 1.58V, 1.7V ~ 1.9V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
256-LBGA
Supplier Device Package
256-FBGA (17x17)


Предложения поставщиков